1.30.1 0.65 2 . 3 0 . 1 5 0.30.1 2.10.1 0 . 5 2 5 1 . 2 5 0 . 1 0 . 3 6 0.1 +0.05 -0.02 0 . 1 m a x 0 . 9 5 0 . 0 5 sot-323 unit:mm 1 2 3 1 emitter 2 base 3 collector 1.30.1 0.65 2 . 3 0 . 1 5 0.30.1 2.10.1 0 . 5 2 5 1 . 2 5 0 . 1 0 . 3 6 0.1 +0.05 -0.02 0 . 1 m a x 0 . 9 5 0 . 0 5 sot-323 unit:mm 1 2 3 1 emitter 2 base 3 collector mm sta 92 features high breakdow n voltage low c ollect or-e m itt er saturation voltage complem entary to mm sta 42 absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-base volt age v cbo -300 v collector-em itt er voltage v ceo -300 v em itt er-base voltage v ebo -5.0 v collector curr ent -continuo us i c -300 m a collector pow er dissipati on p c 200 m w junct ion tem pera ture t j 150 storage tem pera ture t stg -55 to 150 el ectrical character istics t a = 2 5 paramet er sym bol test conditions min typ ma x unit collector-to-b ase breakdow n voltage v (br)cbo ic = 100 a i e =0 -300 v collector-to-e m itt er bre akdow n voltage v (br)ceo ic = 1 m a i b =0 -300 v em itt er- to-base brea kdow n voltage v (br)ebo i e = 100 a i c =0 -5.0 v collector cutof f c urr ent ic bo v cb = -200 v , i e =0 -0.25 a collector cutof f c urr ent i ebo v ce = -3.0v , i c =0 -0.1 a v ce = -10v, i c = -1.0m a 60 v ce = -10v, i c = -10ma 100 200 v ce = -10v, i c = -30ma 60 collector-emit ter sat uration v oltage v ce(sat) i c =-20 m a, i b = -2.0m a -0.5 v base-em itt er saturation voltage v be(sat) i c =-20 m a, i b = -2.0m a -0.9 v transition frequency f t v ce = -20v, i c = -10ma ,f=100m hz 50 mh z output capacitance c ob v cb =-20 v,f =1.0m hz ,i e =0 6.0 pf dc curre nt gain h fe mark ing mar king k3r smd type transistors smd type transistors smd type transistors product specification sales@twtysemi.com 1of 1 http://www.twtysemi.com 4008-318-123
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